A 135-150-GHz Frequency Tripler Using SU-8 Micromachined WR-5 Waveguides

被引:21
作者
Guo, Cheng [1 ,2 ]
Dhayalan, Yuvaraj [2 ]
Shang, Xiaobang [3 ]
Powell, Jeffrey [4 ]
Lancaster, Michael J. [2 ]
Xu, Jun [5 ]
Wang, Yi [2 ]
Wang, Hui [6 ]
Alderman, Byron [6 ]
Huggard, Peter G. [6 ]
机构
[1] Xi An Jiao Tong Univ, Sch Informat & Commun Engn, Xian 710049, Peoples R China
[2] Univ Birmingham, Dept Elect Elect & Syst Engn, Birmingham B15 2TT, W Midlands, England
[3] Natl Phys Lab, Teddington TW11 0LW, Middx, England
[4] Skyarna Ltd, Halesowen B63 3TT, W Midlands, England
[5] Univ Elect Sci & Technol China, Sch Phys Elect, Chengdu 610054, Peoples R China
[6] STFC Rutherford Appleton Lab, RAL Space, Didcot OX11 0QX, Oxon, England
基金
英国工程与自然科学研究理事会; 中国博士后科学基金;
关键词
Filter matching; multiplier; planar Schottky diodes; SU-8; waveguide; POWER-AMPLIFIER; MILLIMETER-WAVE; CO-DESIGN; SILICON; FABRICATION;
D O I
10.1109/TMTT.2019.2955684
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This article presents a 135-150-GHz Schottky diode-based bias-less frequency tripler based on SU-8 micromachined WR-5 waveguides. The waveguides consist of five 432- mu m-thick silver-plated SU-8 layers, which house the diode chip and form the output matching network. The input matching circuit is realized in a computer numerical control (CNC) milled waveguide filter, which also provides support and thermal sink to the SU-8 waveguides. Considering the low thermal conductivity of the SU-8 material, auxiliary metallic thermal paths are designed, and the impact of these is discussed through thermal modeling. The thermal simulations show that under 50-mW power dissipation in the diode anodes, the maximum temperature of the SU-8 tripler is predicted to be 346 K at the diode junction, only 7 K higher than in an entirely metal equivalent. The tripler was measured to have a conversion loss of 16-18 dB and the input return loss is better than 18 dB. This work demonstrates that SU-8 micromachined waveguides can be used to package high-frequency semiconductor components, which, like other photolithography-based processes such as silicon deep reactive ion etching (Si-DRIE), has the potential for submicrometer feature resolution.
引用
收藏
页码:1035 / 1044
页数:10
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