Leakage current in thin-films Ta2O5 on Si -: is it a limiting factor for nanoscale dynamic memories?

被引：5

作者：

Atanassova, E ^{[1
]}

Paskaleva, A ^{[1
]}

机构：

[1] Bulgarian Acad Sci, Inst Solid State Phys, BU-1784 Sofia, Bulgaria

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2003年 / 14卷 / 10-12期

关键词：

Electronic Material; Applied Field; Critical Review; Leakage Current; Access Memory;

D O I：

10.1023/A:1026114717542

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A critical review of leakage current values and reliability issues for Ta2O5 thin films as high-k storage insulators in gigascale dynamic random access memories (DRAMs) is presented. The challenges for reaching the leakage current limits allowable for 1-4 Gbit DRAMs are discussed. The implications for the conduction mechanisms in Ta2O5, and their dependence on the parameters of the system Ta2O5/Si, are presented. The results of high-temperature oxygen annealing on the conduction mechanism of r.f.-sputtered Ta2O5 are illustrated. A leakage current density as low as 10(-8)Acm(-2) at a 1 MV cm(-1) applied field has been obtained. It is concluded that the dominant conduction mechanism in the intermediate fields (0.8-1.3 MV cm(-1)) can be effectively controlled by appropriate technological steps. (C) 2003 Kluwer Academic Publishers.

引用

页码：671 / 675

页数：5

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