52-75 GHz wideband low-noise amplifier in 90 nm CMOS technology

被引：13

作者：

Sananes, R. ^{[1
]}

Socher, E. ^{[1
]}

机构：

[1] Tel Aviv Univ, Sch Elect Engn, IL-69978 Tel Aviv, Israel

来源：

ELECTRONICS LETTERS | 2012年 / 48卷 / 02期

关键词：

GAIN;

D O I：

10.1049/el.2011.2788

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A three-stage single-ended low-noise amplifier covering almost the entire V-band is presented. The design employs three cascade single-ended stages with pi-sections for wideband interstage matching and source degeneration at the first stage. The amplifier achieves a peak gain of 14 dB and minimum noise figure of 4.8 dB. A record 3 dB bandwidth of 37% is achieved with power consumption of 32 mW and core silicon area of 0.065 mm(2) in 90 nm CMOS technology.

引用

页码：71 / 72

页数：2

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