Thickness dependence of the structural and electrical properties of ZnO thermal-evaporated thin films

被引：0

作者：

Ghaderi, A. ^{[1
]}

Elahi, S. M. ^{[2
]}

Solaymani, S.

Naseri, M. ^{[3
]}

Ahmadirad, M. ^{[4
]}

Bahrami, S. ^{[1
]}

Khalili, A. E. ^{[1
]}

机构：

[1] Islamic Azad Univ, Tehran Cent Branch, Dept Phys, Tehran, Iran

[2] Islamic Azad Univ, Sci & Res Branch, Plasma Phys Res Ctr, Tehran, Iran

[3] Islamic Azad Univ, Kermanshah Branch, Dept Phys, Kermanshah, Iran

[4] Inst Res Fundamental Sci IPM, Tehran, Iran

来源：

PRAMANA-JOURNAL OF PHYSICS | 2011年 / 77卷 / 06期

关键词：

Zinc oxide thin film; thermal evaporation; X-ray diffraction; atomic force microscope; electrical conductivity; OPTICAL-PROPERTIES; TEMPERATURE; GROWTH; SUBSTRATE;

D O I：

10.1007/s12043-011-0155-7

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

ZnO thin films of different thicknesses were prepared by thermal evaporation on glass substrates at room temperature. Deposition process was carried out in a vapour pressure of about 5.54 x 10(-5) mbar. The substrate target distance was kept constant during the process. By XRD and AFM techniques the microstructural characteristics and their changes with variation in thickness were studied. Electrical resistivity and conductivity of samples vs. temperature were investigated by four-probe method. It was shown that an increase in thickness causes a decrease in activation energy.

引用

页码：1171 / 1178

页数：8

共 19 条

[1] Sol-Gel and Thermally Evaporated Nanostructured Thin ZnO Films for Photocatalytic Degradation of Trichlorophenol [J].

Aal, A. Abdel ;

Mahmoud, Sawsan A. ;

Aboul-Gheit, Ahmed K. .

NANOSCALE RESEARCH LETTERS, 2009, 4 (07) :627-634

[2]

[Anonymous], 4 POINT PROB MAN EEC

[3] Optically pumped lasing of ZnO at room temperature [J].

Bagnall, DM ;

Chen, YF ;

Zhu, Z ;

Yao, T ;

Koyama, S ;

Shen, MY ;

Goto, T .

APPLIED PHYSICS LETTERS, 1997, 70 (17) :2230-2232

[4] Influence of annealing temperature on the properties of ZnO thin films deposited by thermal evaporation [J].

Bouhssira, N. ;

Abed, S. ;

Tomasella, E. ;

Cellier, J. ;

Mosbah, A. ;

Aida, M. S. ;

Jacquet, M. .

APPLIED SURFACE SCIENCE, 2006, 252 (15) :5594-5597

[5]

Fay S., 2000, P 16 PHOT SOL EN C, P362

[6] Recent advances in ZnO transparent thin film transistors [J].

Fortunato, E ;

Barquinha, P ;

Pimentel, A ;

Gonçalves, A ;

Marques, A ;

Pereira, L ;

Martins, R .

THIN SOLID FILMS, 2005, 487 (1-2) :205-211

[7] Epitaxial growth and optoelectronic properties of nitrogen-doped ZnO films on (11(2)over-bar-0) Al2O3 substrate [J].

Guo, XL ;

Tabata, H ;

Kawai, T .

JOURNAL OF CRYSTAL GROWTH, 2002, 237 :544-547

[8]

HASSE MA, 1991, APPL PHYS LETT, V59, P1272

[9] Structural, electrical and optical properties of aluminum doped zinc oxide films prepared by radio frequency magnetron sputtering [J].

Kim, KH ;

Park, KC ;

Ma, DY .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (12) :7764-7772

[10] Effect of fluorine doping on structural, electrical and optical properties of ZnO thin films [J].

Kumar, PMR ;

Kartha, CS ;

Vijayakumar, KP ;

Singh, F ;

Avasthi, DK .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 117 (03) :307-312

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