Amorphous Ge-Se thin films prepared by pulsed-laser deposition

被引：14
|
作者：
Nemec, P
Jedelsky, J
Frumar, M
Stábl, M
Cernosek, Z
Vlcek, M
机构：
[1] Univ Pardubice, Dept Gen & Inorgan Chem, Pardubice 53210, Czech Republic
[2] Univ Pardubice, Res Ctr, Pardubice 53210, Czech Republic
[3] Acad Sci Czech Republic, Inst Macromol Chem, Pardubice 53210, Czech Republic
[4] Univ Pardubice, Joint Lab Solid State Chem, Pardubice 53210, Czech Republic
来源：
PHILOSOPHICAL MAGAZINE | 2004年 / 84卷 / 09期
关键词：
D O I：
10.1080/14786430310001642271
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Amorphous GexSe1-x, x = 0.22-0.28 thin films were prepared by the pulsed-laser deposition technique. The photo-induced and thermally induced changes of structure and optical gap E opt g of the films were studied and discussed. The exposure and annealing causes bleaching of the. lms, and E-g(opt) increases. The structure is influenced only a little by exposure; the annealing causes a decrease in the Raman band amplitudes corresponding to Ge-Ge and Se-Se bonds and to structural units similar to (GeSe)(n). This can be ascribed to chemical reactions between fragments formed during pulsed-laser deposition.
引用
收藏
页码：877 / 885
页数：9
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