Structure engineering of WO3 nanoparticles for porous film applications by advanced reactive gas deposition

被引:36
作者
Reyes, LF
Saukko, S
Hoel, A
Lantto, V [1 ]
Granqvist, CG
机构
[1] Univ Oulu, Microelect & Mat Phys Labs, FIN-90570 Oulu, Finland
[2] Univ Nacl Ingn, Fac Ciencias, Lima, Peru
[3] Univ Uppsala, Angstrom Lab, Dept Mat Sci, SE-75121 Uppsala, Sweden
基金
芬兰科学院;
关键词
electrical properties; films; microstructure; sensors; WO3;
D O I
10.1016/S0955-2219(03)00417-5
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Fine-grained crystalline or amorphous thin films are normally produced by atomistic deposition of species under conditions giving a low adaton mobility. Here we consider an alternative high-temperature route employing advanced reactive gas deposition afor structure engineering of its nanoparticles in making nanocrystalline films, especially, for gas sensing applications. For instance, structure engineering may be necessary in the case of very fine-grained n-type semiconductor oxide films in order to increase the electrical conductivity of the films. The crystal structure of WO3 together with its different phases makes possible structure engineering of its nanoparticles by high-temperature processes such as the reactive gas deposition. Produced nanocrystalline WO3 films in metastable tetragonal crystal structure were found to be very sensitive to H2S in air already at room temperature. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1415 / 1419
页数:5
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