A high efficiency normally-off MODFET power MMIC for PHS operating under 3.0V single-supply condition

被引：5
|
作者：
Kunihisa, T
Yokoyama, T
Nishijima, M
Yamamoto, S
Nishitsuji, M
Nishii, K
Nakayama, M
Ishikawa, O
机构：
来源：
GAAS IC SYMPOSIUM - 19TH ANNUAL, TECHNICAL DIGEST 1997 | 1997年
关键词：
D O I：
10.1109/GAAS.1997.628232
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A normally-off MODFET power MMIC has been developed for 1.9GHz Japanese Personal Handy-phone System (PHS). High power added efficiency (PAE) of 41.7% at the output power (P-out) of 22.0dBm has been achieved under 3.0V single-supply condition. The operating current is only 127mA and the adjacent channel leakage power (P-adj) is -58.2dBc. Three FETs with their matching circuits are integrated on a very small die (1.1mm(2)) of the MMIC.
引用
收藏
页码：37 / 40
页数：4
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