Stoichiometry of Nickel Oxide Films Prepared by ALD

被引：45
作者：
Bachmann, Julien [1 ]
Zolotaryov, Andriy [1 ]
Albrecht, Ole [1 ]
Goetze, Silvana [2 ]
Berger, Andreas [2 ]
Hesse, Dietrich [2 ]
Novikov, Dmitri [3 ]
Nielsch, Kornelius [1 ]
机构：
[1] Univ Hamburg, Inst Appl Phys, D-20355 Hamburg, Germany
[2] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
[3] HASYLAB DESY, D-22603 Hamburg, Germany
来源：
CHEMICAL VAPOR DEPOSITION | 2011年 / 17卷 / 7-9期
关键词：
ATOMIC LAYER DEPOSITION; NIO FILMS; THIN-FILMS; PRECURSORS; MAGNETISM; OXYGEN;
D O I：
10.1002/cvde.201004300
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Communication: Nickel oxide films obtained from nickelocene and ozone by atomic layer deposition at 230 degrees C are substoichiometric, but have the crystal structure of NiO. Oxygen can be driven out of the solid by annealing under inert atmosphere, or added into it via aerobic annealing.
引用
收藏
页码：177 / +
页数：5
相关论文
共 25 条
  • [1] Ordered iron oxide nanotube arrays of controlled geometry and tunable magnetism by atomic layer deposition
    Bachmann, Julien
    Jing, Jing
    Knez, Mato
    Barth, Sven
    Shen, Hao
    Mathur, Sanjay
    Goesele, Ulrich
    Nielsch, Kornelius
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2007, 129 (31) : 9554 - +
  • [2] Size effects in ordered arrays of magnetic nanotubes: Pick your reversal mode
    Bachmann, Julien
    Escrig, Juan
    Pitzschel, Kristina
    Montero Moreno, Josep M.
    Jing, Jing
    Goerlitz, Detlef
    Altbir, Dora
    Nielsch, Kornelius
    [J]. JOURNAL OF APPLIED PHYSICS, 2009, 105 (07)
  • [3] BOCHMANN M, 1996, J CHEM SOC DA, V3, P255
  • [4] Stress development in sputtered NiO thin films during heat treatment
    Brückner, W
    Kaltofen, R
    Thomas, J
    Hecker, M
    Uhlemann, M
    Oswald, S
    Elefant, D
    Schneider, CM
    [J]. JOURNAL OF APPLIED PHYSICS, 2003, 94 (08) : 4853 - 4858
  • [5] Atomic layer deposition of nickel by the reduction of preformed nickel oxide
    Chae, J
    Park, HS
    Kang, SW
    [J]. ELECTROCHEMICAL AND SOLID STATE LETTERS, 2002, 5 (06) : C64 - C66
  • [6] Effect of oxygen on characteristics of nickel oxide/indium tin oxide heterojunction diodes
    Chang, Hung-Lu
    Lu, T. C.
    Kuo, H. C.
    Wang, S. C.
    [J]. JOURNAL OF APPLIED PHYSICS, 2006, 100 (12)
  • [7] FIEVET F, 1979, J APPL CRYSTALLOGR, V12, P387, DOI 10.1107/S0021889879012747
  • [8] Atomic Layer Deposition: An Overview
    George, Steven M.
    [J]. CHEMICAL REVIEWS, 2010, 110 (01) : 111 - 131
  • [9] *ICSD, 2006, 61324 ICSD
  • [10] Atomic Layer Deposition of NiO by the Ni(thd)2/H2O Precursor Combination
    Lindahl, Erik
    Ottosson, Mikael
    Carlsson, Jan-Otto
    [J]. CHEMICAL VAPOR DEPOSITION, 2009, 15 (7-9) : 186 - 191
123