A Physically Unclonable Function with 0% BER Using Soft Oxide Breakdown in 40nm CMOS

被引:0
作者
Chuang, Kai-Hsin [1 ,2 ]
Bury, Erik [2 ]
Degraeve, Robin [2 ]
Kaczer, Ben [2 ]
Linten, Dimitri [2 ]
Verbauwhede, Ingrid [1 ]
机构
[1] Katholieke Univ Leuven, COSIC, IMEC, Leuven, Belgium
[2] IMEC, Leuven, Belgium
来源
2018 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC): PROCEEDINGS OF TECHNICAL PAPERS | 2018年
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A physically unclonable function (PUF) utilizing the randomness of soft oxide breakdown (BD) locations in MOSFETs is presented. The so-called soft-BD PUF features a self-limiting mechanism to generate one single soft-BD spot in a pair of MOSFETs; the subsequent BD location is used as the source of entropy to generate a highly stable "0" or "1" bit with an equal probability of 0.5. The soft-BD PUF comprising all the essential periphery circuits are fabricated in a 40nm CMOS process. Experiments show that the PUF has no instability in most of the operating conditions using the proposed readout scheme. The native bit error rate remains zero from V-DD=0.8V to 1.5V at room temperature and from -20 degrees C to 120 degrees C at nominal V-DD=0.9V. The throughput is shown to be at least 40 Mb/s and the PUF readout consumes only 51.8 fJ/bit. The randomness and uniqueness of the PUF are close to an ideal case, and no spatial correlation was observed.
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页码:157 / 160
页数:4
相关论文
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