Doping-barrier varactors for frequency-multipliers

The doping-barrier varactor (DBV), proposed as a new device for frequency-multipliers by Freyer and Claassen [1], combines the advantages of varactors with symmetrical capacitance-voltage characteristics with the ability to realise potential barriers, the height of which can be essentially larger as compared to hetero-barrier varactors. The consequence is a higher inset-voltage of current flow from which an increase of input power and higher multiplier efficiencies are expected. The device structure, the numerical simulation as well as first theoretical and experimental results of the DBV are presented in this paper.