Charge carrier lifetime in boron carbide thin films

被引：19

作者：

Bao, Ruqiang ^{[1
]}

Yan, Zijie ^{[1
]}

Chrisey, Douglas B. ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Dept Mat Sci & Engn, Troy, NY 12180 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 19期

关键词：

D O I：

10.1063/1.3589816

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Charge carrier lifetime is a critical parameter to improve the conversion efficiency of radioisotope power sources and the sensitivity of neutron detectors based on boron carbide thin films. The effective charge carrier lifetime in B(4)C boron carbide films has been investigated by using transient photoconductivity decay. The carrier lifetime depends on the characterization conditions as well as the structure of the films. The measured lifetime could be up to similar to 1 ms in B(4)C film, which is much longer than that in conventional semiconductors. The photoresistance change in B(4)C films and the photovoltaic response of B(4)C/n-Si(100) heterojunctions have also been studied. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3589816]

引用

页数：3

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