Electrical conduction mechanism and gas sensing properties of Pd-doped TiO2 films

被引:33
作者
Mardare, Diana [1 ]
Iftimie, Nicoleta [2 ]
Crisan, Maria [3 ]
Raileanu, Malina [3 ]
Yildiz, A. [4 ]
Coman, T. [1 ]
Pomoni, K. [5 ]
Vomvas, A. [5 ]
机构
[1] Alexandru Ioan Cuza Univ, Fac Phys, Iasi 700506, Romania
[2] Natl Inst Res & Dev Tech Phys, Iasi 700050, Romania
[3] Inst Phys Chem Ilie Murgulescu, Bucharest 060021, Romania
[4] Ahi Evran Univ, Fac Sci & Arts, Dept Phys, TR-40040 Kirsehir, Turkey
[5] Univ Patras, Dept Phys, Patras 26500, Greece
关键词
Pd-doped TiO2 thin films; Sol-gel; Sensor; Electronic properties; GEL THIN-FILMS; TRANSIENT PHOTOCONDUCTIVITY; DIELECTRIC-PROPERTIES; POLYCRYSTALLINE;
D O I
10.1016/j.jnoncrysol.2011.01.035
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Undoped and Pd-doped titanium oxide thin films (0.5 wt.%) were prepared by the sol-gel technique (dip-coating) on glass and silicon substrates. The as-deposited thin films were compacted by subjecting them to different annealing temperatures (300 degrees C, 500 degrees C). The dependences of the electrical conductivity vs. inverse temperature were investigated in air and in vacuum. A study of the effects of Pd-doping, annealing temperature and ambient conditions on their electrical properties was performed. The sensing behavior of titanium oxide thin films exposed to some reducing gases (methane, acetone, ethanol, formaldehyde and liquefied petroleum gas) was carried out, by means of electrical conductivity measurements. All the studied films are most sensitive to formaldehyde, with a special remark for the Pd-doped ones deposited on silicon substrates. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:1774 / 1779
页数:6
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