Influence of compositional variations on optoelectrical properties of Ge20Sn10Se70-xTex glass system

被引:0
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作者
Sharma, Surbhi [1 ]
Sharma, Navjeet [2 ]
Sarin, Amit [3 ]
机构
[1] Kanya Maha Vidyalaya, Dept Phys, Jalandhar, Punjab, India
[2] DAV Coll, Dept Phys, Jalandhar, Punjab, India
[3] IKG Punjab Tech Univ, Dept Phys Sci, Kapurthala, Punjab, India
关键词
chalcogenide glasses; thin films; optical constants; energy band gap; activation energy; cohesive energy; GE-SE-SN; OPTICAL-PROPERTIES; ELECTRICAL-PROPERTIES; THIN-FILMS; INDEX; ABSORPTION; CONSTANTS; THICKNESS; BEHAVIOR; GAP;
D O I
10.1117/1.OE57.11.117110
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Variations in optical and electrical properties have been investigated by isoelectronic substitution of Te at the cost of Se in the Ge20Sn10Se70_xTex (x = 3, 6, 9, 12, and 15) system. The current study reports linear (i.e., mu, k, E-g ) as well as nonlinear (i.e., mu(2) and chi(3) ) optical transmission coefficients of as-prepared specimens. An overall increase in nonlinear parameters chi(3) and mu(2) can be observed with an increase in the Te concentration. High nonlinearity makes these glasses a prominent candidate for optical device applications. Further attempt has been made to observe the variations in conductivity with respect to temperature for amorphous Ge20Sn10Se70_xTex (x = 3, 6, 9, 12, 15) thin films using a two-probe method and hence the band structure and corresponding conduction mechanism have been investigated. (C) 2018 Society of Photo-Optical Instrumentation Engineers (SPIE)
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页数:9
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