Threshold voltage and turn-on voltage in organic transistors: Sensitivity to contact parasitics

被引：23
作者：
Giraudet, L. [1 ]
Simonetti, O. [1 ]
机构：
[1] Univ Reims, LMEN, F-51687 Reims 02, France
来源：
ORGANIC ELECTRONICS | 2011年 / 12卷 / 01期
关键词：
Organic transistors; Threshold voltage; Turn-on voltage; Non-linear injection; Modelling; Fermi level pinning; FIELD-EFFECT TRANSISTORS; CHARGE INJECTION;
D O I：
10.1016/j.orgel.2010.11.002
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Threshold voltage and turn-on voltage of organic field effect transistors are very sensitive to the fabrication process. Their knowledge and control are required for design and fabrication of OFET based circuits. A simple gradual channel OFET model is not appropriate close to threshold, and even fails to describe turn-on voltage. Therefore a distributed model has been developed, based on a numerical calculation of the accumulated charge along the channel, allowing the calculation of the transistor output characteristics both below and above threshold. Also, uneven source contact carrier injection can be modelled, based on physical parameters. In the present work, in-depth analysis of contact influence is carried-out, both below and above threshold, and impact on threshold voltage and turn-on voltage is outlined. Besides, surface Fermi level pinning effects and influence of the semiconductor layer thickness is also discussed. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：219 / 225
页数：7
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