Small- and Large-Signal Performance of III-Nitride RF Switches With Hybrid Fast/Slow Gate Design

被引：7

作者：

Sattu, Ajay Kumar ^{[1
]}

Yang, Jinwei ^{[1
]}

Gaska, Remis ^{[1
]}

Khan, Md Bilal ^{[2
]}

Shur, Michael ^{[3
]}

Simin, Grigory ^{[2
]}

机构：

[1] Sensor Elect Technol, Columbia, SC 29209 USA

[2] Dept Elect Engn, Columbia, SC 29209 USA

[3] Rensselaer Polytech Inst, Dept Elect Engn, Troy, NY 12180 USA

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2011年 / 21卷 / 06期

关键词：

AlGaN/GaN; heterostructure field-effect transistors (HFETs); IP3; MMIC; SPDT;

D O I：

10.1109/LMWC.2011.2138686

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the small-signal and power performance of AlGaN/GaN RF switches with novel gate design incorporating regular metal gate deposited over a "slow" gate electrode formed by a low-conducting InGaN film. SPDT RF switch MMICs using hybrid "fast/slow" gate AlGaN/GaN MOSHFETs show superior transmission characteristics while maintaining the same high-power and high-linearity performance as the switches based on conventional MOSHFETs.

引用

页码：305 / 307

页数：3

共 2 条

[1] A SPDT RF Switch Small- and Large-Signal Characteristics on TR-HR SOI Substrates
Esfeh, Babak Kazemi
Rack, Martin
Makovejev, Sergej
Allibert, Frederic
Raskin, Jean-Pierre
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2018, 6 (01): : 543 - 550
[2] A SPDT RF Switch Small- and Large-signal Characteristics on TR-HR SOI Substrates
Esfeh, B. Kazemi
Makovejev, S.
Allibert, F.
Raskin, J. -P.
2017 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S), 2017,

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