Tunnel-junction-connected distributed-feedback vertical-cavity surface-emitting laser

被引：9

作者：

Korshak, AN ^{[1
]}

Gribnikov, ZS ^{[1
]}

Mitin, VV ^{[1
]}

机构：

[1] Wayne State Univ, Dept Elect & Comp Engn, Detroit, MI 48202 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 11期

关键词：

D O I：

10.1063/1.122217

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An injection distributed-feedback vertical-cavity surface-emitting laser (VCSEL) with tunnel junctions served as quasi-Ohmic intercontacts (tunnel-junction-connected distributed-feedback VCSEL) is proposed. A periodic structure of vertically stacked double-heterostructure laser diodes connected by low-resistance tunnel junctions forms a vertical distributed-feedback (DFB) laser medium. To minimize the threshold, the DFB structure is placed in a Fabry-Perot cavity designed to match gain layers with the maximums of the optical mode, and the tunnel junctions-with its minimums. The passive regions with tunnel junctions provide effective vertical injection into each active region of this multiple-active-region laser. This DFB VCSEL is expected to have an improved performance, specifically, reduced threshold current and heightened output power. (C) 1998 American Institute of Physics.

引用

页码：1475 / 1477

页数：3

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