Structural and optical properties of annealed W-doped BaTiO3 thin films prepared by pulsed laser deposition

被引:12
作者
Fasasi, A. Y. [1 ]
Bucher, R.
Ngom, B. D.
Buttner, U.
Maaza, M.
Theron, C.
Rohwer, E. G.
机构
[1] Obafemi Awolowo Univ, Ctr Energy Res & Dev, Ife, Osun State, Nigeria
[2] Natl Res Fdn, iThemba Labs, Cape Town, South Africa
[3] Univ Cheikh Anta Diop, Grp Phys Solides & Sci Mat, Fac Sci & Tech, Dakar, Senegal
[4] Univ Stellenbosch, Dept Elect Engn, ZA-7600 Stellenbosch, South Africa
[5] Univ Stellenbosch, Dept Phys, Laser Res Inst, ZA-7600 Stellenbosch, South Africa
关键词
D O I
10.1088/0953-8984/19/46/466214
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Tungsten-doped barium titanate thin films have been prepared on glass and silicon substrates by laser ablation. The films were compositionally, structurally and optically characterized. Rutherford backscattering spectroscopy simulation gave the composition to be Ba0.85W0.05Ti0.94O3.2 with a cationic ratio ( Ba + W)/ Ti of 0.95. All the films without annealing were amorphous. The calculated lattice constants through the diffraction patterns on the silicon substrate indicated the high probability of the film having a cubic symmetry. Atomic force microscopy results showed the film surface to be smooth with a maximum roughness of 5 nm, varied grain size distribution and average grain size of 50 nm. Through the Swanepoel envelope method, the refractive index dispersion was obtained. Maximum and minimum refractive indices of 2.6 and 2.32 at 475 and 812 nm, respectively, were calculated. Analysis of the dependence of the refractive index and the dielectric constant on wavelength led to the determination of the high-frequency dielectric constant ( epsilon(infinity)) and the carrier density effective mass ratio ( N-c/m*). The single-oscillator model proved to be adequate for describing the dispersion behaviour. Through this model, the dispersion parameter, average oscillator parameter and strength were determined. The optical band gap obtained on annealed sample was 3.8 eV by assuming a direct transition.
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页数:11
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