On the Field Patterns in Elliptic-shaped Microshield Lines Loaded with Left-handed Materials by the Edge-based Finite Element Method

被引:0
作者
Sun, Hai [1 ,2 ]
机构
[1] Leshan Normal Univ, Sch Math & Informat Sci, Leshan 614000, Peoples R China
[2] East China Inst Technol, Sch Sci, Nanchang 344000, Peoples R China
来源
2014 TENTH INTERNATIONAL CONFERENCE ON COMPUTATIONAL INTELLIGENCE AND SECURITY (CIS) | 2014年
关键词
edge-based finite element method; elliptic-shaped microshield lines; field patterns; WAVE-GUIDE; MICROSTRIP; DESIGN;
D O I
10.1109/CIS.2014.34
中图分类号
TP18 [人工智能理论];
学科分类号
081104 ; 0812 ; 0835 ; 1405 ;
摘要
the field patterns in elliptic-shaped microshield lines loaded with left-handed materials are analyzed by edge-based finite element method. The left-handed material is defined by assigning to it a negative permittivity and negative permeability simultaneously. The field patterns include the dominant mode and the first higher-order mode. Some illustrated figures provided in this paper are considered useful in novel microwave and millimeter devices.
引用
收藏
页码:330 / 333
页数:4
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