Humidity-voltaic characteristics of Ag-PS-Si structures

被引：9

作者：

Dzhafarov, TD ^{[1
]}

Can, B

机构：

[1] Yildiz Tech Univ, Dept Phys, TR-80270 Istanbul, Turkey

[2] Azerbaijan Acad Sci, Inst Phys, Baku 370143, Azerbaijan

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 2000年 / 19卷 / 24期

关键词：

D O I：

10.1023/A:1006735716844

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical characteristics of Ag-porous silicon (PS)-Si structures and PS-Si structures at the different ambient humidity and room temperature are investigated. Ag-PS-Si structures are fabricated by evaporation of Ag film onto the PS surface of PS-Si structures using electron-beam evaporator technique. It is shown that current-voltage characteristics of Ag-PS-Si structures strongly depend on ambient relative humidity, whereas humidity-sensitiveness of electrical characteristics of PS-Si structures is weakly expressed. The humidity-voltaic effect is analyzed.

引用

页码：2193 / 2195

页数：3

共 13 条

[11] POROUS SILICON MEMBRANES FOR GAS-SENSOR APPLICATIONS [J].

TALIERCIO, T ;

DILHAN, M ;

MASSONE, E ;

FOUCARAN, A ;

GUE, AM ;

BRETAGNON, T ;

FRAISSE, B ;

MONTES, L .

SENSORS AND ACTUATORS A-PHYSICAL, 1995, 46 (1-3) :43-46

[12] The formation of nanostructures on silicon surfaces in the presence of hydrogen [J].

Teschke, O ;

Soares, DM ;

Nunes, LAO .

APPLIED PHYSICS LETTERS, 1997, 70 (21) :2840-2842

[13] POROUS SILICON-OXIDE LAYER FORMATION BY THE ELECTROCHEMICAL TREATMENT OF A POROUS SILICON LAYER [J].

YAMANA, M ;

KASHIWAZAKI, N ;

KINOSHITA, A ;

NAKANO, T ;

YAMAMOTO, M ;

WALTON, CW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (09) :2925-2927

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