Humidity-voltaic characteristics of Ag-PS-Si structures

被引：9

作者：

Dzhafarov, TD ^{[1
]}

Can, B

机构：

[1] Yildiz Tech Univ, Dept Phys, TR-80270 Istanbul, Turkey

[2] Azerbaijan Acad Sci, Inst Phys, Baku 370143, Azerbaijan

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 2000年 / 19卷 / 24期

关键词：

D O I：

10.1023/A:1006735716844

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical characteristics of Ag-porous silicon (PS)-Si structures and PS-Si structures at the different ambient humidity and room temperature are investigated. Ag-PS-Si structures are fabricated by evaporation of Ag film onto the PS surface of PS-Si structures using electron-beam evaporator technique. It is shown that current-voltage characteristics of Ag-PS-Si structures strongly depend on ambient relative humidity, whereas humidity-sensitiveness of electrical characteristics of PS-Si structures is weakly expressed. The humidity-voltaic effect is analyzed.

引用

页码：2193 / 2195

页数：3

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