Electronic and Optical Properties of Heterostructures based on Indium Chalcogenides

被引：1

作者：

Kharkhalis, L. Yu. ^{[1
]}

Glukhov, K. E. ^{[1
]}

Babuka, T. Ya. ^{[1
,2
]}

机构：

[1] Uzhgorod Natl Univ, Inst Phys & Chem Solid State, Voloshyn St 54, UA-88000 Uzhgorod, Ukraine

[2] Jan Dlugosz Univ Czestochowa, Fac Math & Nat Sci, Inst Phys, Al Armii Krajowej 13-15, PL-42200 Czestochowa, Poland

来源：

ACTA PHYSICA POLONICA A | 2017年 / 132卷 / 02期

关键词：

IN4SE3; ENERGY; INSE;

D O I：

10.12693/APhysPolA.132.319

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The models of the heterostructures based on the beta-InSe, In4Se3 and In4Te3 crystals were proposed and the first-principles study of their electronic and optical properties were presented. The band spectra, the spatial distributions of the electron density and the absorption coefficients for different polarizations along crystal axes for the heterostructures of the (In4Se3)(m)/(In4Te3)(m) and beta-InSe/ln(4)Se(3) type were calculated. The evolution of the changes in both energy spectrum and optical functions of the heterostructures in comparison with the bulk crystals has been analyzed. Our calculations point out the heterostructures stability and good agreement with the experimental investigations of the photosensitivity in the near and middle infrared region.

引用

页码：319 / 321

页数：3

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