Intrinsic pinning, commensurability, and reentrant behavior on superconducting Mo/Si multilayers

被引：9

作者：

Fogel, NY ^{[1
]}

Mikhailov, MY ^{[1
]}

Bomze, YV ^{[1
]}

Yuzephovich, OI ^{[1
]}

机构：

[1] Kharkov Low Temp Phys & Engn Inst, UA-310164 Kharkov, Ukraine

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.59.3365

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A reentrance phenomenon is found on Mo/Si multilayers which occurs in parallel to the layers and slightly inclined magnetic fields. This effect may be explained in terms of the intrinsic pinning and vortex lattice (VL) commensurability with the underlying layered structure. The locations of the zero-resistance regions correspond to stable VL configurations or to the transitions between two commensurate lattices. It is suggested that this resistive method may be used as a tool to study VL structure in layered superconductors. [S0163-1829(99)13301-0].

引用

页码：3365 / 3368

页数：4

共 17 条

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