A Frontend for Magnetoresistive Sensors With a 2.2-pA/√Hz Low-Noise Current Source

被引：1

作者：

Mohamed, Ayman ^{[1
,2
]}

Wagner, Marco ^{[1
]}

Heidari, Hadi ^{[3
]}

Anders, Jens ^{[1
,2
]}

机构：

[1] Univ Stuttgart, Inst Smart Sensors, D-70569 Stuttgart, Germany

[2] Univ Stuttgart, Ctr Integrated Quantum Sci & Technol, D-70569 Stuttgart, Germany

[3] Univ Glasgow, Sch Engn, Microelect Lab, Glasgow G12 8QQ, Lanark, Scotland

来源：

IEEE SOLID-STATE CIRCUITS LETTERS | 2022年 / 5卷

关键词：

Choppers (circuits); current sources; digital-analog conversion; magnetoresistance; END;

D O I：

10.1109/LSSC.2022.3148362

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this letter, we present an integrated readout chip for magnetoresistive (MR) sensors consisting of a readout chain that comprises a dc-coupled fully differential difference amplifier (FDDA) followed by a programmable gain amplifier (PGA), as well as a low-noise current biasing scheme for the MR sensor. The current bias scheme features a 10-bit digital-to-analog converter (DAC) to compensate for process variations of the MR sensing element as well as to calibrate for variations in the de bias field of the sensor. The bias current source achieves a very low current noise floor of 2.2 pA/root Hz for bias currents up to 1 mA. The readout chip is manufactured in 180-nm SOI CMOS and consumes a total power of 38 mW. The letter is an extended version of (Mohamed et al., 2021) incorporating additional modeling details and measurement results.

引用

页码：17 / 20

页数：4

共 10 条

[1]

[Anonymous], 2013, LM134 LM234 LM334 3

[2] A CMOS Front-End With Integrated Magnetoresistive Sensors for Biomolecular Recognition Detection Applications [J].