Phase Transformation Properties of Highly (100)-Oriented PLZST 2/85/12/3 Antiferroelectric Thin Films Deposited on Nb-SrTiO3 Single-Crystal Substrates

被引：6

作者：

Hao, Xihong ^{[2
]}

Zhai, Jiwei ^{[1
]}

Yue, Zhenxing ^{[3
]}

Xu, Jinbao ^{[4
]}

机构：

[1] Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China

[2] Inner Mongolia Univ Sci & Technol, Sch Mat & Met, Baotou 014010, Peoples R China

[3] Tsinghua Univ, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China

[4] Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2011年 / 94卷 / 09期

基金：

中国国家自然科学基金;

关键词：

LEAD-ZIRCONATE; DIELECTRIC-PROPERTIES; INDUCED STRAINS; PBZRO3;

D O I：

10.1111/j.1551-2916.2011.04736.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this work, (Pb0.97La0.02)(Zr0.85Sn0.12Ti0.03)O-3 (PLZST 2/85/12/3) antiferroelectric (AFE) thin films with a thickness of similar to 700 nm were successfully fabricated on (100)-oriented Nb-SrTiO3 single crystal via a sol-gel technique. X-ray diffraction and scanning electron microscopy results showed that the obtained AFE films had a highly (100)-preferred orientation and displayed a uniform surface microstructure. Electrical measurements, such as P-E loops, the electric-field, and temperature-dependent dielectric properties, demonstrated a mixture of AFE and FE phases in PLZST 2/85/12/3 films deposited on Nb-SrTiO3 substrates.

引用

页码：2816 / 2818

页数：3

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