Morphological and photoluminescence study of porous thin SiC layer grown onto silicon

被引：8

作者：

Bourenane, K. ^{[1
]}

Keffous, A. ^{[1
]}

Kechouache, M. ^{[2
]}

Nezzal, G. ^{[3
]}

Boukezzata, A. ^{[3
]}

Kerdja, T. ^{[4
]}

机构：

[1] UDTS, Algiers, Algeria

[2] USTHB, Fac Phys, Algiers 16111, Algeria

[3] USTHB, Fac Genie Mecan & Genie Procedes, Algiers 16111, Algeria

[4] CDTA, Algiers, Algeria

来源：

SURFACE AND INTERFACE ANALYSIS | 2008年 / 40卷 / 3-4期

关键词：

silicon carbide; thin layer; silicon; pulsed laser deposition; porous silicon carbide;

D O I：

10.1002/sia.2697

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A porous SiC layer was fabricated by anodization of a 1.6 mu m-thin SIC layer deposited onto p-type Si(100) substrate by pulsed laser deposition (PLD), using a hot-pressed 6H-SiC(p) as sputtered target. P-type porous SiC layers were realized by anodization in HF/ethylene glycol (ETG) electrolyte (1 : 1 by vol.) at different etching times. The properties of the porous SIC layer formed by this method were investigated by SIMS, SEM, Fourier transform Infra-Red spectroscopy (FT-IR) and photoluminescence (PL). The results show that the growth layer was crystalline, with the photoluminescent spectra showing a blue band emission. In addition, the results clearly indicate an increase in PL intensity by 10 times of magnitude compared to that exhibited by the unetched sample. Copyright (C) 2008 John Wiley & Sons, Ltd.

引用

页码：763 / 768

页数：6

共 16 条

[1] Excess noise characteristics of hydrogenated amorphous silicon p-i-n photodiode films [J].