Improvements in a-plane GaN crystal quality by a two-step growth process

被引：109

作者：

Hollander, J. L. ^{[1
]}

Kappers, M. J. ^{[1
]}

McAleese, C. ^{[1
]}

Humphreys, C. J. ^{[1
]}

机构：

[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 10期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2830023

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nonpolar (11 (2) over bar0) a-plane GaN films have been grown by metal-organic vapor deposition on r-plane (1 (1) over bar 02) sapphire. Lateral growth is favored using a low V:III ratio resulting in films with a smooth surface, while pitted films are grown at a high V:III ratio indicating preferential on-axis growth. High-resolution x-ray diffraction analysis of both film types showed a strong anisotropy in the peak width of the symmetric omega rocking curve with respect to the in-plane orientation, phi. In-plane isotropic behavior of crystallinity with overall reduced omega full width at half maximum values was achieved when the growth was initiated at a high V:III ratio before reducing the V:III ratio for film coalescence. An improvement of crystal quality through initial surface roughening was equally realized by the incorporation of partial-coverage SiNx interlayers. (C) 2008 American Institute of Physics.

引用

页数：3

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