Improved infrared photoluminescence characteristics from circularly ordered self-assembled Ge islands

被引：18
作者：
Das, Samaresh [1 ]
Das, Kaustuv [2 ]
Singha, Raj Kumar [1 ]
Manna, Santanu [1 ]
Dhar, Achintya [1 ]
Ray, Samit Kumar [1 ]
Raychaudhuri, Arup Kumar [2 ]
机构：
[1] Indian Inst Technol, Dept Phys & Meteorol, Kharagpur 721302, W Bengal, India
[2] SN Bose Natl Ctr Basic Sci, DST Unit Nanosci, Kolkata 700098, India
来源：
NANOSCALE RESEARCH LETTERS | 2011年 / 6卷
关键词：
MULTIPLE LAYERS; QUANTUM; ALIGNMENT; STRAIN; GE/SI;
D O I：
10.1186/1556-276X-6-416
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The formation of circularly ordered Ge-islands on Si(001) has been achieved because of nonuniform strain field around the periphery of the holes patterned by focused ion beam in combination with a self-assembled growth using molecular beam epitaxy. The photoluminescence (PL) spectra obtained from patterned areas (i.e., ordered islands) show a significant signal enhancement, which sustained till 200 K, without any vertical stacking of islands. The origin of two activation energies in temperature-dependent PL spectra of the ordered islands has been explained in detail.
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页码：1 / 7
页数：7
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