Improved infrared photoluminescence characteristics from circularly ordered self-assembled Ge islands

被引：18

作者：

Das, Samaresh ^{[1
]}

Das, Kaustuv ^{[2
]}

Singha, Raj Kumar ^{[1
]}

Manna, Santanu ^{[1
]}

Dhar, Achintya ^{[1
]}

Ray, Samit Kumar ^{[1
]}

Raychaudhuri, Arup Kumar ^{[2
]}

机构：

[1] Indian Inst Technol, Dept Phys & Meteorol, Kharagpur 721302, W Bengal, India

[2] SN Bose Natl Ctr Basic Sci, DST Unit Nanosci, Kolkata 700098, India

来源：

NANOSCALE RESEARCH LETTERS | 2011年 / 6卷

关键词：

MULTIPLE LAYERS; QUANTUM; ALIGNMENT; STRAIN; GE/SI;

D O I：

10.1186/1556-276X-6-416

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The formation of circularly ordered Ge-islands on Si(001) has been achieved because of nonuniform strain field around the periphery of the holes patterned by focused ion beam in combination with a self-assembled growth using molecular beam epitaxy. The photoluminescence (PL) spectra obtained from patterned areas (i.e., ordered islands) show a significant signal enhancement, which sustained till 200 K, without any vertical stacking of islands. The origin of two activation energies in temperature-dependent PL spectra of the ordered islands has been explained in detail.

引用

页码：1 / 7

页数：7

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