Properties of free-standing GaN prepared by HVPE using AlN/Si substrate

被引：0

作者：

Kim, ST ^{[1
]}

Lee, YJ

Chung, SH

Moon, DC

机构：

[1] Taejon Natl Univ Technol, Dept Mat Engn, Taejon 300717, South Korea

[2] Optel Semicond Co LTD, Iksan 570210, South Korea

[3] Kwangwoon Univ, Dept Elect Mat Engn, Seoul 139701, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 1998年 / 33卷

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A hydride vapor phase epitaxy (HVPE) method was employed to grow a thick-film GaN on AlN/Si substrates, and the subsequent chemical removal of the Si substrate resulted in freestanding GaN substrates without cracks, having a current maximum size of 10x10 mm(2) and a thickness of 350 mu m. The freestanding and crack-free GaN single crystalline substrate is useable for homoepitaxial growth of GaN, and the HVPE method is a promising approach for the preparation of large area, crack-free GaN substrates.

引用

页码：S313 / S315

页数：3

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