High thermoelectric performance of Cu substituted type-VIII clathrate Ba8Ga16-xCuxSn30 single crystals

被引：48

作者：

Deng, Shukang ^{[1
,2
]}

Saiga, Yuta ^{[1
]}

Kajisa, Kousuke ^{[1
]}

Takabatake, Toshiro ^{[1
]}

机构：

[1] Hiroshima Univ, Dept Quantum Matter ADSM & IAMR, Higashihiroshima 7398530, Japan

[2] Yunan Normal Univ, Key Lab Renewable Energy Adv Mat & Mfg Technol, Educ Minist, Kunming 650092, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 109卷 / 10期

关键词：

D O I：

10.1063/1.3583570

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single crystalline samples of type-VIII clathrate Ba8Ga16-xCuxSn30 (0 <= x <= 0.033) were prepared by the Sn-flux method. Upon substituting Cu for Ga, the carrier mobility at 300 K increases twice while the carrier density stays in the range 3.1 - 4.2 x 10(19)/cm(3). Consequently, the electrical resistivity is decreased from 5.3 m Omega cm for x = 0 to 3.2 m Omega cm for x = 0.033. Irrespective of x, the Seebeck coefficient is largely negative and linearly changes with temperature in the range 300<T<600K. The thermal conductivity is in the range 0.68 - 0.74 W/Km at 300 K for all samples. The dimensionless figure of merit ZT for x = 0.033 reaches the maximum of 1.35 at 540 K. (C) 2011 American Institute of Physics. [doi:10.1063/1.3583570]

引用

页数：4

共 27 条

[1] Glasslike versus crystalline thermal conductivity in carrier-tuned Ba8Ga16X30 clathrates (X=Ge,Sn) [J].

Avila, M. A. ;

Suekuni, K. ;

Umeo, K. ;

Fukuoka, H. ;

Takabatake, T. .

PHYSICAL REVIEW B, 2006, 74 (12)

[2] Transport properties of composition tuned α- and β-Eu8Ga16-xGe30+x -: art. no. 165206 [J].

Bentien, A ;

Pacheco, V ;

Paschen, S ;

Grin, Y ;

Steglich, F .

PHYSICAL REVIEW B, 2005, 71 (16)

[3] Enhancement of thermoelectric efficiency in type-VIII clathrate Ba8Ga16Sn30 by Al substitution for Ga [J].

Deng, Shukang ;

Saiga, Yuta ;

Suekuni, Koichiro ;

Takabatake, Toshiro .

JOURNAL OF APPLIED PHYSICS, 2010, 108 (07)

[4]

Goldsmid H. J., 2010, INTRO THERMOELECTRIC

[5] Effect of Cu substitution on thermoelectric properties of Ge clathrates [J].

Hokazono, M ;

Anno, H ;

Matsubara, K .

MATERIALS TRANSACTIONS, 2005, 46 (07) :1485-1489

[6] Structural, transport, and thermal properties of the single-crystalline type-VIII clathrate Ba8Ga16Sn30 -: art. no. 075113 [J].

Huo, D ;

Sakata, T ;

Sasakawa, T ;

Avila, MA ;

Tsubota, M ;

Iga, F ;

Fukuoka, H ;

Yamanaka, S ;

Aoyagi, S ;

Takabatake, T .

PHYSICAL REVIEW B, 2005, 71 (07)

[7] High thermoelectric performance of type-III clathrate compounds of the Ba-Ge-Ga system [J].

Kim, Jung-Hwan ;

Okamoto, Norihiko L. ;

Kishida, Kyosuke ;

Tanaka, Katsushi ;

Inui, Haruyuki .

ACTA MATERIALIA, 2006, 54 (08) :2057-2062

[8] Synthesis and thermoelectric properties of silicon clathrates Sr8AlxGa16-xSi30 with the type-I and type-VIII structures [J].

Kishimoto, Kengo ;

Ikeda, Naoya ;

Akail, Koji ;

Koyanagi, Tsuyoshi .

APPLIED PHYSICS EXPRESS, 2008, 1 (03) :0312011-0312013

[9] First-principles study of type-I and type-VIII Ba8Ga16Sn30 clathrates [J].

Kono, Yasushi ;

Ohya, Nobuyuki ;

Taguchi, Takashi ;

Suekuni, Koichiro ;

Takabatake, Toshiro ;

Yamamoto, Setsuo ;

Akai, Koji .

JOURNAL OF APPLIED PHYSICS, 2010, 107 (12)

[10] Preparation and thermoelectric properties of A8IIB16IIIB30IV clathrate compounds [J].

Kuznetsov, VL ;

Kuznetsova, LA ;

Kaliazin, AE ;

Rowe, DM .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (11) :7871-7875

← 1 2 3 →