Low power ASIC for high temperature applications

被引：5

作者：

Vermesan, O ^{[1
]}

Rispal, T ^{[1
]}

Soulier, L ^{[1
]}

机构：

[1] SINTEF, Microelect Dept, ASICS, Oslo, Norway

来源：

1998 HIGH-TEMPERATURE ELECTRONIC MATERIALS, DEVICES AND SENSORS CONFERENCE | 1998年

关键词：

D O I：

10.1109/HTEMDS.1998.730655

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes the design and implementation of a low power/low voltage mixed signal BiCMOS ASIC that operates at temperatures up to 200 degrees C. The ASIC is integrated into a gauge for downhole pressure and temperature measurements. If incorporates four measurement channels (CLK1-clock one, CLK2-clock two, P-pressure, T-temperature), with four high precision X-tal Pierce oscillators and a signal processing path for each channel. The output frequency from the CLK1 channel is used as a precision reference for the pressure and temperature channels and as an external clack. The ASIC is designed for high pressure transducers and incorporated into a downhole memory and wireline quartz gauge. The ASIC was fabricated into a 1.2 mu m BiCMOS double poly, double metal process. The voltage supply range is from 5V to 3.3 V and the circuit occupies a silicon area of 15 mm(2). The ASIC is packaged in a ceramic 28 pins SOIC package.

引用

页码：81 / 85

页数：5