A 500 °C 8-b Digital-to-Analog Converter in Silicon Carbide Bipolar Technology

被引：17

作者：

Hedayati, Raheleh ^{[1
]}

Lanni, Luigia ^{[1
]}

Malm, Bengt Gunnar ^{[1
]}

Rusu, Ana ^{[1
]}

Zetterling, Carl-Mikael ^{[1
]}

机构：

[1] KTH Royal Inst Technol, Sch Informat & Commun Technol, S-16440 Kista, Sweden

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2016年 / 63卷 / 09期

关键词：

Bipolar ICs; bipolar junction transistor (BJT); current steering R-2R digital-to-analog converter (DAC); high temperature; silicon carbide (SiC); Spice Gummel-Poon; TEMPERATURE;

D O I：

10.1109/TED.2016.2588418

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-temperature integrated circuits provide important sensing and controlling functionality in extreme environments. Silicon carbide bipolar technology can operate beyond 500 degrees C and has shown stable operation in both digital and analog circuit applications. This paper demonstrates an 8-b digital-to-analog converter (DAC). The DAC is realized in a current steering R-2R configuration. High-gain Darlington current switches are used to ensure ideal switching at 500 degrees C. The measured differential nonlinearity (DNL) and integral nonlinearity (INL) at 25 degrees C are 0.79 and 1.01 LSB, respectively, while at 500 degrees C, the DNL and INL are 4.7 and 2.5 LSB, respectively. In addition, the DAC achieves 53.6 and 40.6 dBc of spurious free dynamic range at 25 degrees C and 500 degrees C, respectively.

引用

页码：3445 / 3450

页数：6

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