Ion beam synthesis of β-FeSi2 as an IR photosensitive material

被引：24

作者：

Maeda, Y ^{[1
]}

Akita, T ^{[1
]}

Umezawa, K ^{[1
]}

Miyake, K ^{[1
]}

Sagawa, M ^{[1
]}

机构：

[1] Univ Osaka Prefecture, Dept Mat Sci, Osaka 5998531, Japan

来源：

OPTOELECTRONIC MATERIALS AND DEVICES | 1998年 / 3419卷

关键词：

ion beam synthesis; IR photosensor; beta-FeSi2; Fe-56(+) ion implantation;

D O I：

10.1117/12.311028

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The large sized (similar to 10 mu m) and flat polycrystalline beta-FeSi2/n-Si heterojunction can be formed by a triple energy implantation method and the sample annealing at 800 degrees C. The polycrystalline beta-FeSi2 gains show good crystalline characteristics, a photoluminescence peak at 0.81 eV at 4.2 K and the optical direct band-gap of 0.84 eV. The beta-FeSi2/n-Si heterojunction shows good diode characteristics and high photovoltaic sensitivity for IR light These results support that the ion beam synthesized beta-FeSi2/n-Si heterojunction is a promising IR sensitive materials.

引用

页码：354 / 360

页数：7