Loss mechanisms in hydrazine-processed Cu2ZnSn(Se,S)4 solar cells

被引：314

作者：

Gunawan, Oki ^{[1
]}

Todorov, Teodor K. ^{[1
]}

Mitzi, David B. ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 23期

关键词：

BAND-GAP; EFFICIENCY; DEVICE; FILMS;

D O I：

10.1063/1.3522884

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a device characterization study for hydrazine-processed kesterite Cu2ZnSn(Se,S)(4) (CZTSSe) solar cells with a focus on pinpointing the main loss mechanisms limiting device efficiency. Temperature-dependent study and time-resolved photoluminescence spectroscopy on these cells, in comparison to analogous studies on a reference Cu(In,Ga)(Se,S)(2) (CIGS) cell, reveal strong recombination loss at the CZTSSe/CdS interface, very low minority-carrier lifetimes, and high series resistance that diverges at low temperature. These findings help identify the key areas for improvement of these CZTSSe cells in the quest for a high-performance indium-and tellurium-free solar cell. (C) 2010 American Institute of Physics. [doi:10.1063/1.3522884]

引用

页数：3

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