Patterning of multilayer graphene on glass substrate by using ultraviolet picosecond laser pulses

被引:14
作者
Chang, Tien-Li [1 ]
Chen, Zhao-Chi [1 ]
Chen, Wen-Yi [1 ]
Han, Hsieh-Cheng [2 ]
Tseng, Shih-Feng [3 ]
机构
[1] Natl Taiwan Normal Univ, Dept Mechatron Engn, 162 Sec 1,Ho Ping E Rd, Taipei 106, Taiwan
[2] Acad Sinica, Res Ctr Appl Sci, Taipei, Taiwan
[3] Natl Appl Res Labs, Instrument Technol Res Ctr, Hsinchu, Taiwan
关键词
Ultrafast laser; Picosecond laser; Laser ablation; Multilayer graphene; Thin films; Patterning graphene; LABEL-FREE; THIN-FILM; FABRICATION; SENSOR; OXIDE;
D O I
10.1016/j.mee.2016.01.012
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents an approach that involves directly patterning multilayer graphene on a glass substrate by using ultraviolet picosecond (PS) laser irradiation. The PS laser is ultrafast, with a pulse duration of 15 ps, and can be operated at a wavelength of 355 nm. In this study, the multiple pulse ablation threshold fluence for patterning multilayer graphene was 5.2 J/cm(2), with a pulse repetition rate of 200 kHz and at a fixed scanning speed of 250 mm/s. The effect of laser parameters on the width, depth, and quality of patterning was explored. To investigate laser-nonablated and laser-ablated multilayer graphene, the characteristics of graphene thin film were measured using Raman, transmittance, and electrical analyses. The experimental results revealed that the PS laser is a promising and competitive tool for ablating multiple layers to several layers of graphene thin films and even for completely removing graphene thin-film layers. The PS laser technique can be useful in developing graphene-based devices. Moreover, this approach has the potential for industrial applications. (C) 2016 Published by Elsevier B.V.
引用
收藏
页码:1 / 5
页数:5
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