Parameter extraction of a base-collector equivalent circuit model for sige heterojunction bipolar transistors

被引：0
|
作者：
Lee, S [1 ]
机构：
[1] Hankuk Univ Foreign Studies, Dept Elect Engn, Yongin 449791, South Korea
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2003年 / 38卷 / 05期
关键词：
SiGeHBT; parameter extraction; modeling; equivalent circuit; S parameters;
D O I：
10.1002/mop.11067
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
By deriving new Z-parameter equations, accurate extraction is performed to determine all base-collector model parameters in a SiGe heterojunction bipolar transistor (HBT) equivalent circuit directly from measured S parameters, without any test structure and geometric calculation. The calculated power and current gains are in good agreement with the measured gains, thus verifying the accuracy of the extraction. (C) 2003 Wiley Periodicals, Inc.
引用
收藏
页码：384 / 387
页数：4
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