Influence of nonequilbrium LO phonons on high-frequency performance of one-dimensional hot electrons in quantum wires of polar semiconductors

Small-signal ac transport of degenerate one-dimensional hot electrons in quantum wires of GaAs and In(0.53)Gao(0.47)As is studied for lattice temperatures of 77 K and 300 K. The carrier energy loss via polar optic phonons and momentum losses via polar optic phonons, acoustic phonons and ionized impurities are included in the calculations. Alloy disorder scattering in momentum loss is additionally incorporated for (In,Ga)As. The consideration of nonequilibrium optical phonons or hot phonons is found to enhance the 3dB cut-off frequency (f(3dB)) considerably, where the ac mobility falls to 0.707 of its low frequency value. f(3dB) is generally higher for (In,Ga)As quantum wire than for GaAs.