Fully silicided NiSi gate electrodes on HNON gate dielectrics for low-power applications

被引：6

作者：

Manabe, K ^{[1
]}

Takahashi, K ^{[1
]}

Ikarashi, T ^{[1
]}

Morioka, A ^{[1
]}

Watanabe, H ^{[1
]}

Yoshihara, T ^{[1
]}

Tatsumi, T ^{[1
]}

机构：

[1] NEC Corp Ltd, Sys Devices Res Labs, Sagamihara, Kanagawa 2291198, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 4B期

关键词：

metal gate; high-k; nickel monosilicide; HfSiON; MOSFET;

D O I：

10.1143/JJAP.44.2205

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The fully silicided (FUSI)-nickel monosilicide (NiSi) metal gate electrode on the HfSiON gate dielectric has been investigated for low-power metal-oxide-semiconductor field effect transistors (MOSFETs). We found that the FUSI-NiSi electrode oil the HfSiON dielectric has a work function of 4.55 eV, which improved the threshold voltage shift of PMOSFETs by 0.15 V compared with that of the poly-Si/HfSiON MOSFETs. At the same time, full silicidation eliminated the gate depletion and thereby we achieved the capacitance equivalent thickness at inversion of 2.1 nm and a five-order-of-magnitude reduction in the gate leakage current compared with the poly-Si/SiO2 devices. Moreover, we obtained an excellent carrier mobility for the FUSI-NiSi/HfSiON transistors (PMOS: 100%, NMOS: 90% compared with the poly-Si/SiO2 reference transistors). These results show that the FUSI-NiSi/HfSiON gate stack is a promising candidate for next-generation low-power MOSFETs.

引用

页码：2205 / 2209

页数：5

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