Structural and optical characterization of Ni-doped CdS quantum dots

被引：47

作者：

Thambidurai, M. ^{[1
]}

Muthukumarasamy, N. ^{[1
]}

Agilan, S. ^{[1
]}

Arul, N. Sabari ^{[2
]}

Murugan, N. ^{[3
]}

Balasundaraprabhu, R. ^{[4
]}

机构：

[1] Coimbatore Inst Technol, Dept Phys, Coimbatore, Tamil Nadu, India

[2] Bharathiar Univ, Dept Nanosci & Technol, Coimbatore, Tamil Nadu, India

[3] Coimbatore Inst Technol, Dept Mech Engn, Coimbatore, Tamil Nadu, India

[4] PSG Coll Technol, Dept Phys, Coimbatore, Tamil Nadu, India

来源：

JOURNAL OF MATERIALS SCIENCE | 2011年 / 46卷 / 09期

关键词：

CHEMICAL BATH DEPOSITION; THIN-FILMS; PHYSICAL-PROPERTIES; NANOPARTICLES; NANOCRYSTALS; SEMICONDUCTOR; MATRIX;

D O I：

10.1007/s10853-010-5204-y

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ni-doped CdS quantum dots have been prepared by chemical precipitation technique. The X-diffraction results indicated that the particle size of Ni-doped CdS nanoparticles is smaller than that of undoped CdS and no secondary phase was observed. The average grain size of the nanoparticles is found to lie in the range of 2.7-4 nm. The compositional analysis results show that Cd, Ni, and S are present in the samples. HRTEM studies reveal that the average particle size of undoped and Ni-doped CdS quantum dots is 2 and 3 nm, respectively. Raman spectra shows that 1LO, 2LO, and 3LO peaks of the Ni-doped CdS samples are slightly red shifted when compared to that of undoped CdS. The absorption edge of Ni-doped CdS nanoparticles is found to shift towards the higher-wavelength (red shift) side when compared to that of undoped CdS and the band gap is observed to lie in the range of 3.79-3.95 eV. This band gap is higher than that of the bulk CdS and is due to quantum confinement effect present in CdS nanoparticles.

引用

页码：3200 / 3206

页数：7

共 36 条

[11]

KASSIM A, 2004, SCIENCE, V31, P131

[12] Characterization of gallium-doped CdS thin films grown by chemical bath deposition [J].

Khallaf, Hani ;

Chai, Guangyu ;

Lupan, Oleg ;

Chow, Lee ;

Park, S. ;

Schulte, Alfons .

APPLIED SURFACE SCIENCE, 2009, 255 (07) :4129-4134

[13] Electrical and optical properties of boron doped CdS thin films prepared by chemical bath deposition [J].

Lee, JH ;

Yi, JS ;

Yang, KJ ;

Park, JH ;

Oh, RD .

THIN SOLID FILMS, 2003, 431 :344-348

[14] Chemical bath deposition of CdS quantum dots on vertically aligned ZnO nanorods for quantum dots-sensitized solar cells [J].

Lee, Wonjoo ;

Min, Sun Ki ;

Dhas, Vivek ;

Ogale, Satishchandra B. ;

Han, Sung-Hwan .

ELECTROCHEMISTRY COMMUNICATIONS, 2009, 11 (01) :103-106

[15]

LUCCIO TD, 2007, MAT SCI ENG C, V27, P1372

[16] Ultrasound-assisted microwave preparation of Ag-doped CdS nanoparticles [J].

Ma, Jun ;

Tai, Guo'an ;

Guo, Wanlin .

ULTRASONICS SONOCHEMISTRY, 2010, 17 (03) :534-540

[17]

Maleki M, 2007, SEMICOND PHYS QUANT, V10, P30

[18] Luminescence in Mn-doped CdS nanocrystals [J].

Nag, Angshuman ;

Sapra, Sameer ;

Gupta, Subhra Sen ;

Prakash, Ankita ;

Ghangrekar, Ajit ;

Periasamy, N. ;

Sarma, D. D. .

BULLETIN OF MATERIALS SCIENCE, 2008, 31 (03) :561-568

[19] Optical and surface morphological properties of triethylamine passivated lead sulphide nanoparticles [J].

Navaneethan, M. ;

Nisha, K. D. ;

Ponnusamy, S. ;

Muthamizhchelvan, C. .

MATERIALS CHEMISTRY AND PHYSICS, 2009, 117 (2-3) :443-447

[20] Optical properties of CdS sintered film [J].

Patidar, D ;

Sharma, R ;

Jain, N ;

Sharma, TP ;

Saxena, NS .

BULLETIN OF MATERIALS SCIENCE, 2006, 29 (01) :21-24

← 1 2 3 4 →