Accurate time-domain modeling of multi-finger pHEMT transistor based on transmission line theory

被引：14

作者：

Aliakbari, Hanieh ^{[1
]}

Abdipour, Abdolali ^{[1
]}

Mirzavand, Rashid ^{[2
]}

机构：

[1] Amirkabir Univ Technol, Radio Commun Ctr Excellence, Dept Elect Engn, Microwave Mm Wave & Wireless Commun Res Lab, Tehran 15914, Iran

[2] Amirkabir Univ Technol, Inst Commun Technol & Appl Electromagnet, Tehran 15914, Iran

来源：

AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS | 2015年 / 69卷 / 01期

关键词：

Multi finger semiconductor device; Fully distributed modeling; FDTD; Multi-conductor transmission line; Double gate InGaAs pHEMT; DEVICES; SIMULATION;

D O I：

10.1016/j.aeue.2014.09.007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a fully distributed modeling of double gate InGaAs pHEMT as a 5-line active coupled transmission line is described. In order to apply the transmission line theory, a proper equivalent lumped circuit model is allocated for the differential length of the double gate quintuple line transistor and the active multi-conductor transmission line equations are obtained. The passive element values are extracted through numerical analysis and conversion of the single gate active small signal model to the double gate one is performed by an introduced scaling method. These equations are solved by the finite difference time domain technique. The simulation results are compared with the results of conventional slice modeling which are in agreement at low frequencies but show differences, at high frequencies. (C) 2014 Elsevier GmbH. All rights reserved.

引用

页码：215 / 225

页数：11