Cross-Interaction in Cu/Sn/Co/Sn/Ni and Cu/Sn-Co/Co/Sn- Co/Ni Couples

被引:4
作者
Chen, Chih-chi [1 ,2 ]
Tseng, Yan-lun [1 ,2 ]
机构
[1] Chung Yuan Christian Univ, R&D Ctr Membrane Technol, Taoyuan 32023, Taiwan
[2] Chung Yuan Christian Univ, Dept Chem Engn, Taoyuan 32023, Taiwan
关键词
Diffusion barrier material; Cu; Co; Cu/low-k; INTERFACIAL REACTIONS; DIFFUSION COUPLES; SOLDER JOINT; CU; NI; SN; CO; COPPER; SYSTEM; LAYERS;
D O I
10.1007/s11664-014-3620-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this study we examined cross-interactions of Cu/Co and Co/Ni by use of Cu/Sn/Co/Sn/Ni and Cu/Sn-0.04 wt.% Co/Co/Sn-0.04 wt.% Co/Ni couples. In the Cu/Sn/Co couple, Cu can diffuse through the pure Sn solder, and the (Cu, Co)(6)Sn-5 phase is formed at the Co side. The rate of consumption of Co decreases in the presence of Cu. Adding 0.04 wt.% Co to the pure Sn solder blocks diffusion of Cu; the (Cu, Co)(6)Sn-5 phase at the Co side is not observed, and the rate of Co consumption is increased. In the Co/Sn/Ni couple, no noticeable Co and Ni diffusion is observed. When 0.04 wt.% Co is added, the ternary (Ni, Co)Sn-4 phase is formed at the Ni side. These results indicate Co is an effective barrier to diffusion of Cu which can be used in flip chip packaging of Cu/low-k chips.
引用
收藏
页码:1021 / 1027
页数:7
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