InAs/GaAs multiple quantum dot structures grown by LP-MOVPE

被引：7

作者：

Pangrác, J ^{[1
]}

Oswald, J ^{[1
]}

Hulicius, E ^{[1
]}

Melichar, K ^{[1
]}

Vorlícek, V ^{[1
]}

Drbohlav, I ^{[1
]}

Simecek, T ^{[1
]}

机构：

[1] Acad Sci Czech Republ, Inst Phys, Prague 16253, Czech Republic

来源：

THIN SOLID FILMS | 2000年 / 380卷 / 1-2期

关键词：

Quantum Dots; InAs; GaAs; MOVPE; photoluminescence;

D O I：

10.1016/S0040-6090(00)01478-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Structures with self-organised InAs quantum dots in a GaAs matrix were grown by the low pressure metal-organic vapour phase epitaxy (LP-MOVPE) technique. Photoluminescence and atomic force microscopy were used as the main characterisation methods for the growth optimisation. The properties of multiple-stacked quantum dot structures are influenced by the thickness of the GaAs separation layers (spacers) between quantum dot-containing InAs layers, by the InAs layer thickness, by arsine partial pressure during growth, and by group III precursor flow interruption time. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：101 / 104

页数：4

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