Stress evolution during growth of 1-D island arrays: Kinetics and length scaling

被引:13
作者
Chason, E. [1 ]
Engwall, A. M. [1 ]
Miller, C. M. [1 ]
Chen, C. -H. [1 ]
Bhandari, A. [2 ]
Soni, S. K. [3 ]
Hearne, S. J. [4 ]
Freund, L. B. [5 ]
Sheldon, B. W. [1 ]
机构
[1] Brown Univ, Sch Engn, Providence, RI 02912 USA
[2] PPG Ind Inc, Pittsburgh, PA 15272 USA
[3] Intel Corp, Hillsboro, OR 97124 USA
[4] Sandia Natl Labs, Albuquerque, NM 87185 USA
[5] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA
关键词
Thin film; Residual stress; Kinetics; Electrodeposition; THIN METAL-FILMS; COMPRESSIVE STRESS; INTRINSIC STRESS; COALESCENCE; MECHANISMS; SUBSTRATE; SURFACE; MODEL;
D O I
10.1016/j.scriptamat.2014.10.012
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
To explore the mechanisms controlling residual stress in thin films, we have measured the stress evolution during electrodeposition of Ni on lithographically patterned substrates with different pattern spacings and growth rates. Studying films with a controlled island geometry allows us to relate the stress (measured using wafer curvature) to the evolution of the morphology. We analyze the measurements with a model that focuses on the stress that develops where adjacent islands grow together to form new elements of grain boundary. (C) 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:33 / 36
页数:4
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