Growth Method-Dependent and Defect Density-Oriented Structural, Optical, Conductive, and Physical Properties of Solution-Grown ZnO Nanostructures

被引:15
作者
Rana, Abu ul Hassan Sarwar [1 ]
Lee, Ji Young [1 ]
Shahid, Areej [1 ]
Kim, Hyun-Seok [1 ]
机构
[1] Dongguk Univ Seoul, Div Elect & Elect Engn, Seoul 04620, South Korea
基金
新加坡国家研究基金会;
关键词
ZnO; defects; structural properties; convection; microwave; nanostructures; hydrothermal; NANOTUBE ARRAYS; ZINC-OXIDE; ROOM-TEMPERATURE; FABRICATION; HYDROGEN; PHOTOLUMINESCENCE; CAVITATION; DEPOSITION; NANOWIRES; NANORODS;
D O I
10.3390/nano7090266
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
It is time for industry to pay a serious heed to the application and quality-dependent research on the most important solution growth methods for ZnO, namely, aqueous chemical growth (ACG) and microwave-assisted growth (MAG) methods. This study proffers a critical analysis on how the defect density and formation behavior of ZnO nanostructures (ZNSs) are growth method-dependent. Both antithetical and facile methods are exploited to control the ZnO defect density and the growth mechanism. In this context, the growth of ZnO nanorods (ZNRs), nanoflowers, and nanotubes (ZNTs) are considered. The aforementioned growth methods directly stimulate the nanostructure crystal growth and, depending upon the defect density, ZNSs show different trends in structural, optical, etching, and conductive properties. The defect density of MAG ZNRs is the least because of an ample amount of thermal energy catered by high-power microwaves to the atoms to grow on appropriate crystallographic planes, which is not the case in faulty convective ACG ZNSs. Defect-centric etching of ZNRs into ZNTs is also probed and methodological constraints are proposed. ZNS optical properties are different in the visible region, which are quite peculiar, but outstanding for ZNRs. Hall effect measurements illustrate incongruent conductive trends in both samples.
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页数:16
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共 54 条
[1]   RF sputtering enhanced the morphology and photoluminescence of multi-oriented ZnO nanostructure produced by chemical vapor deposition [J].
Al-Salman, Husam S. ;
Abdullah, M. J. .
JOURNAL OF ALLOYS AND COMPOUNDS, 2013, 547 :132-137
[2]   Synthesis of ZnO Nanostructures for Low Temperature CO and UV Sensing [J].
Amin, Muhammad ;
Manzoor, Umair ;
Islam, Mohammad ;
Bhatti, Arshad Saleem ;
Shah, Nazar Abbas .
SENSORS, 2012, 12 (10) :13842-13851
[3]   Optically pumped lasing of ZnO at room temperature [J].
Bagnall, DM ;
Chen, YF ;
Zhu, Z ;
Yao, T ;
Koyama, S ;
Shen, MY ;
Goto, T .
APPLIED PHYSICS LETTERS, 1997, 70 (17) :2230-2232
[4]   A simple approach for the growth of highly ordered ZnO nanotube arrays [J].
Cheng, Chung-Liang ;
Lin, Jia-Syu ;
Chen, Yang-Fang .
JOURNAL OF ALLOYS AND COMPOUNDS, 2009, 476 (1-2) :903-907
[5]   Temperature-dependent growth mechanisms of low-dimensional ZnO nanostructures [J].
Cheng, Qijin ;
Ostrikov, Kostya .
CRYSTENGCOMM, 2011, 13 (10) :3455-3461
[6]   EFFECT OF STRAIN-INDUCED BAND-GAP NARROWING ON HIGH-CONCENTRATION PHOSPHORUS DIFFUSION IN SILICON [J].
FAIR, RB .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :860-868
[7]   THE TEMPERATURE OF CAVITATION [J].
FLINT, EB ;
SUSLICK, KS .
SCIENCE, 1991, 253 (5026) :1397-1399
[8]   Photoluminescence investigation of the carrier recombination processes in ZnO quantum dots and nanocrystals [J].
Fonoberov, VA ;
Alim, KA ;
Balandin, AA ;
Xiu, FX ;
Liu, JL .
PHYSICAL REVIEW B, 2006, 73 (16)
[9]   ZnO nanowire transistors [J].
Goldberger, J ;
Sirbuly, DJ ;
Law, M ;
Yang, P .
JOURNAL OF PHYSICAL CHEMISTRY B, 2005, 109 (01) :9-14
[10]   Influence of postdeposition annealing on the structural and optical properties of sputtered zinc oxide film [J].
Gupta, V ;
Mansingh, A .
JOURNAL OF APPLIED PHYSICS, 1996, 80 (02) :1063-1073