p-Type conduction in stacking-fault-free m-plane GaN

被引：46

作者：

McLaurin, Melvin ^{[1
]}

Speck, James S. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, JST ERATO Grp, Santa Barbara, CA 93106 USA

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2007年 / 1卷 / 03期

关键词：

12;

D O I：

10.1002/pssr.200701041

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Transport measurements of p-type m-plane GaN films grown on low extended-defect density, free-standing m-plane (10 (1) over bar0) GaN substrates are presented. No significant anisotropy in in-plane mobility was found for hole concentrations between 2.45 x 10(17) and 8.7 x 10(18) cm(-3). Since faulted, heteroepitaxial m-plane films showed significant anisotropy in electron and hole mobility a microstructural feature with anisotropic distribution (basal plane stacking faults) is discussed as a possible source of anisotropic scattering in non-polar and semi-polar films. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：110 / 112

页数：3

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