A SiC CMOS Digitally Controlled PWM Generator for High-Temperature Applications

被引：27

作者：

Roy, Sajib ^{[1
]}

Murphree, Robert C. ^{[1
]}

Abbasi, Affan ^{[1
]}

Rahman, Ashfaqur ^{[1
]}

Ahmed, Shamim ^{[1
]}

Gattis, James Austin ^{[1
]}

Francis, A. Matt ^{[2
]}

Holmes, Jim ^{[2
]}

Mantooth, H. Alan ^{[1
]}

Di, Jia ^{[3
]}

机构：

[1] Univ Arkansas, Dept Elect Engn, Fayetteville, AR 72701 USA

[2] Ozark Integrated Circuits Inc, Fayetteville, AR 72701 USA

[3] Univ Arkansas, Dept Comp Sci & Comp Engn, Fayetteville, AR 72701 USA

来源：

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS | 2017年 / 64卷 / 10期

基金：

美国国家科学基金会;

关键词：

High-temperature electronics; pulse width modulation (PWM); silicon carbide (SiC); wide bandgap integrated circuits (ICs); ELECTRONICS; OPERATION; CIRCUITS;

D O I：

10.1109/TIE.2017.2694413

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper describes a silicon carbide pulse width modulation (PWM) signal generator in the 1.2 mu m HiT-SiC CMOS process developed by Raytheon Systems Ltd. The design features a 6-b binary input, which allows for setting a system's duty cycle. The results presented in this paper utilize a field programmable gate array board in the test setup to dynamically set the duty cycle by controlling each bit. A control current is also available to give the user added flexibility for tuning the duty cycle. Experimental results show the duty cycle range of the PWM generator to be between 4.7% and 95.2% at 400 degrees C. Sustained operation of the circuit is demonstrated over a period of 50 h at 300 degrees C. Finally, the PWM generator is evaluated in the operation of a boost converter.

引用

页码：8364 / 8372

页数：9

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