共 38 条
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- [7] Investigation of Surface Morphology of 6H-SiC Irradiated with He+ and H2+ Ions MATERIALS, 2018, 11 (02):
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- [10] Incorporation of hydrogen (1H and 2H) into 4H-SiC during epitaxial growth SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 565 - 568