Influence of the growth conditions on the LaAlO3/SrTiO3 interface electronic properties

被引：97

作者：

Cancellieri, C. ^{[1
]}

Reyren, N. ^{[1
]}

Gariglio, S. ^{[1
]}

Caviglia, A. D. ^{[1
]}

Fete, A. ^{[1
]}

Triscone, J. -M. ^{[1
]}

机构：

[1] Univ Geneva, DPMC, CH-1211 Geneva 4, Switzerland

来源：

EPL | 2010年 / 91卷 / 01期

基金：

瑞士国家科学基金会;

关键词：

HETEROSTRUCTURES; TITANATE; OXIDES; STATE;

D O I：

10.1209/0295-5075/91/17004

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The effects of oxygen pressure during the growth of LaAlO3 on (001) SrTiO3, and of post-deposition annealing were investigated. While little influence on the structure was observed, the transport properties were found to depend on both growth pressure and annealing. For LaAlO3 layer thicknesses between 5 and 10 unit cells and growth pressures between 10(-4) and 10(-2) mbar, the LaAlO3/SrTiO3 interfaces displayed similar metallic behavior with a sharp transition to a superconducting state. At an oxygen pressure of 10(-6) mbar oxygen vacancies were clearly introduced and extended deep into the SrTiO3 crystal. These vacancies could be removed by post-deposition annealing in 0.2 bar of O-2 at similar to 530 degrees C. At a growth pressure of 10(-4) mbar, the electronic properties of samples with ultra-thin LaAlO3 layers (2 to 3 unit cells thick) were found to depend markedly on the post-annealing step. Copyright (C) EPLA, 2010

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页数：6

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