Surface barrier effect and the crossover in magnetization relaxation in 2H-NbSe2

被引：11
|
作者：
Mishra, PK [1 ]
Ravikumar, G
Rao, TVC
Sahni, VC
Banerjee, SS
Ramakrishnan, S
Grover, AK
Higgins, MJ
机构：
[1] Bhabha Atom Res Ctr, Tech Phys & Prototype Engn Div, Bombay 400085, Maharashtra, India
[2] Tata Inst Fundamental Res, Dept Condensed Matter Phys & Mat Sci, Bombay 400005, Maharashtra, India
[3] NEC Res Inst, Princeton, NJ 08540 USA
来源：
PHYSICA C | 2000年 / 340卷 / 01期
关键词：
type II superconductors; surface barrier; magnetization relaxation;
D O I：
10.1016/S0921-4534(00)00369-5
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have studied the low field magnetization hysteresis and relaxation process in pure 2H-NbSe2 single crystal. Our results show an order of magnitude difference in the relaxation rate for the flux entry and the flux exit. Also, we have observed a characteristic change of slope in M(ln t) curve in the flux-exit case. We analyse this asymmetry in the relaxation rate and the change of slope in M(ln t) curve in the framework of surface barrier controlled irreversible magnetic behaviour. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：65 / 70
页数：6
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