Surface reconstructions on GaAs(001)

被引：143
|
作者：
Ohtake, Akihiro [1 ]
机构：
[1] Natl Inst Mat Sci, Quantum Dot Res Ctr, Tsukuba, Ibaraki 3050044, Japan
来源：
SURFACE SCIENCE REPORTS | 2008年 / 63卷 / 07期
关键词：
GaAs(001) surface; reconstruction; scanning tunneling microscopy; reflection high-energy electron diffraction; reflectance difference spectroscopy;
D O I：
10.1016/j.surfrep.2008.03.001
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
This paper reviews the recent experimental findings on the atomic structures on the(001) surface of GaAs. We systematically studied the structure and composition of the GaAs(001) surfaces using reflection high-energy electron diffraction, reflectance difference spectroscopy, scanning tunneling microscopy, and X-ray photoelectron spectroscopy. We found that the As-rich c(4 x 4)p, c(4 x 4)a, and (2 x 4), and Ga-rich (6 x 6), c(8 x 2), and (4 x 6) reconstructions are formed on the GaAs(001) surface critically depending on the preparation conditions. Atomic structures on these reconstructions will be discussed on the basis of the recent findings of experiments and first-principles calculations. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：295 / 327
页数：33
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