Development and validation of functional imprint material for the step and flash imprint lithography process

被引：13

作者：

Kettle, J. ^{[1
]}

Coppo, P. ^{[2
]}

Lalev, G. ^{[1
]}

Tattershall, C. ^{[3
]}

Dimov, S. ^{[1
]}

Turner, M. L. ^{[3
]}

机构：

[1] Cardiff Univ, MEC, Cardiff CF24 3AA, Wales

[2] Brunel Univ, Wolfson Ctr Mat Proc, Uxbridge UB8 3PH, Middx, England

[3] Univ Manchester, Sch Chem, OMIC, Manchester M13 9PL, Lancs, England

来源：

MICROELECTRONIC ENGINEERING | 2008年 / 85卷 / 5-6期

关键词：

nanoimprint; step-and flash imprint lithography; NIL; S-FIL; lithography; organic semiconductors; phosphorescence;

D O I：

10.1016/j.mee.2007.12.070

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A formulation including dissolved phosphorescent iridium complex has been synthesised as a resist for step and flash imprint lithography (S-FIL (TM)). Functional properties of the resist after curing are demonstrated and structures as small as 50 nm have been successfully imprinted with this material onto a 4 in. silicon wafer. Fluorescent microscopy images demonstrate increased fluorescent signals where arrays of nano structures are imprinted. This technique of direct imprinting of functional materials could potentially lead to rapid, high throughput and low-cost fabrication of nanoscale organic devices and circuits. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：850 / 852

页数：3

共 6 条

[1] 6 nm half-pitch lines and 0.04 μm2 static random access memory patterns by nanoimprint lithography [J].